IRF6662PBF mosfet equivalent, power mosfet.
IDTH
Tj = 150°C 0.1 1 10 100
10
100
Fig 4. Typical Output Characteristics
100 VDS = 10V ≤60µs PULSE WIDTH
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Volt.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6662PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package .
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